Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.) Filing date Publication date Application filed by Monolithic Power Systems Inc filed Critical Monolithic Power Systems Inc Priority to CN201911182510.4A priority Critical patent/CN111192917A/en Publication of CN111192917A publication Critical patent/CN111192917A/en Priority to US16/950,447 priority patent/US20210159330A1/en Status Pending legal-status Critical Current Links Original Assignee Monolithic Power Systems Inc Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.) Inventor 陶宏 傅达平 Current Assignee (The listed assignees may be inaccurate. ![]() Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.) Pending Application number CN201911182510.4A Other languages Chinese ( zh) Google Patents Transverse field effect transistorĭownload PDF Info Publication number CN111192917A CN111192917A CN201911182510.4A CN201911182510A CN111192917A CN 111192917 A CN111192917 A CN 111192917A CN 201911182510 A CN201911182510 A CN 201911182510A CN 111192917 A CN111192917 A CN 111192917A Authority CN China Prior art keywords region field effect effect transistor trench schottky barrier Prior art date Legal status (The legal status is an assumption and is not a legal conclusion. Google Patents CN111192917A - Transverse field effect transistor ![]() CN111192917A - Transverse field effect transistor
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